High-efficiency rectifier achieves 63% power conversion in low start-up voltage for UHF RFID tags in 180 nm CMOS technology

High-efficiency rectifier achieves 63% power conversion in low start-up voltage for UHF RFID tags in 180 nm CMOS technology

Complementary metal-oxide semiconductor technology
N-metal-oxide semiconductor rectifier
Power conversion efficiency
Radio frequency energy harvesting
Radio frequency identification Ultra-high frequency

This paper presents an N-metal-oxide semiconductor (NMOS) rectifier designed for efficient radio frequency (RF) energy harvesting and wireless power transmission in passive ultra-high frequency (UHF) radio frequency identification (RFID) applications. The rectifier’s efficiency is improved through an innovative diode with a new block connection, reducing the threshold voltage compared to conventional diode transistors. This enhancement significantly boosts output voltage and efficiency. A seven-stage configuration, based on the proposed diode and optimized via a superposition method, has been evaluated for its ability to increase DC output voltage and power conversion efficiency (PCE), particularly at low RF input power levels. Simulations show a PCE of 63% at 900 MHz with an RF input of -11 dBm, delivering 1.610 V across a 0.518 MΩ load. Notably, the rectifier maintains a PCE above 30% across a wide input power range from -32 dBm to -5 dBm, overcoming a key challenge of maintaining efficiency under low input power conditions. The circuit architecture was implemented using standard 180 nm TSMC CMOS technology, showcasing its practical applicability in RFID systems.

Zahra Sahel, Sanae Habibi, Abdelhak Bendali, Abid Reda El Wardi, Karima Benkhadda, Samia Zarrik, Hayat El Abassi, Fatehi ALtalqi, Omar Mouhib, Mohamed Habibi

Journal homepage: http://telkomnika.uad.ac.id

Aug 5, 2024

PERI IRAWAN

PDF

ENGLISH

TEXT