TELKOMNIKA Telecommunication, Computing, Electronics and Control
Investigation and design of ion-implanted MOSFET based on (18 nm) channel length

TELKOMNIKA Telecommunication, Computing, Electronics and Control
Investigation and design of ion-implanted MOSFET based on (18 nm) channel length

Channel length, Ion-implanted, MOSFET, TCAD

The aim of this study is to invistgate the characteristics of Si-MOSFET with 18 nm length of ion implemented channel. Technology computer aided design (TCAD) tool from Silvaco was used to simulate the MOSFET’s designed structure in this research. The results indicate that the MOSFET with 18 nm channel length has cut-off frequency of 548 GHz and transconductance of 967 μS, which are the most important factors in calculating the efficiency and improving the performance of the device. Also, it has threshold voltage of (-0.17 V) in addition obtaining a relatively small DIBL (55.11 mV/V) The subthreshold slope was in high value of 307.5 mV/dec. and this is one of the undesirable factors for the device results by short channel effect, but it does not
reduce its performance and efficiency in general.

Firas Natheer Abdul-kadir, Khalid khaleel Mohammad, Yasir Hashim

DOI: 10.12928/TELKOMNIKA.v18i5.15958

Universitas Ahmad Dahlan

October 2020

Sri Wahyuni

ISSN: 1693-6930

http://journal.uad.ac.id/index.php/TELKOMNIKA

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TELKOMNIKA Telecommunication, Computing, Electronics and Control