TELKOMNIKA Telecommunication Computing Electronics and Control
Optimization of 14 nm double gate Bi-GFET for lower leakage current
Dublin Core
Title
TELKOMNIKA Telecommunication Computing Electronics and Control
Optimization of 14 nm double gate Bi-GFET for lower leakage current
Optimization of 14 nm double gate Bi-GFET for lower leakage current
Subject
Bilayer graphene
Double gate MOSFET
High-k/metal gate
Leakage current
Taguchi
Double gate MOSFET
High-k/metal gate
Leakage current
Taguchi
Description
In recent years, breakthroughs in electronics technology have upgraded the
physical properties of the metal oxide semiconductor field effect transistor
(MOSFET) toward smaller sizes and improvements in both quality and
performance. Hence, the growth field effect transistor (GFET) is being
promoted as one of the worthy candidates due to its superior material
characteristics. A 14 nm horizontal double-gate bilayer graphene field effect
transistor (FET) utilizing high-k and a metal gate, which are composed of
hafnium dioxide (HfO2) and tungsten silicide (WSix) respectively. Silvaco
ATHENA and ATLAS technology computer-aided design (TCAD) tools are
used to simulate the design and electrical properties, while Taguchi L9
orthogonal arrays (OA) are used to optimize the electrical properties.
The threshold voltage (VTH) adjustment implant dose, VTH adjustment
implant energy, source/drain (S/D) implant dose, and S/D implant energy
have all been investigated as process parameters, while the VTH adjustment
tilt angle and the S/D implant tilt angle have been investigated as noise
factors. When compared to the initial findings before optimization, the IOFF
has a value of 29.579 nA/μm, indicating a significant improvement. Findings
from the optimization technique demonstrate excellent device performance
with an IOFF of 28.564 nA/μm, which is closer to the international
technology roadmap for semiconductors (ITRS) 2013 target.
physical properties of the metal oxide semiconductor field effect transistor
(MOSFET) toward smaller sizes and improvements in both quality and
performance. Hence, the growth field effect transistor (GFET) is being
promoted as one of the worthy candidates due to its superior material
characteristics. A 14 nm horizontal double-gate bilayer graphene field effect
transistor (FET) utilizing high-k and a metal gate, which are composed of
hafnium dioxide (HfO2) and tungsten silicide (WSix) respectively. Silvaco
ATHENA and ATLAS technology computer-aided design (TCAD) tools are
used to simulate the design and electrical properties, while Taguchi L9
orthogonal arrays (OA) are used to optimize the electrical properties.
The threshold voltage (VTH) adjustment implant dose, VTH adjustment
implant energy, source/drain (S/D) implant dose, and S/D implant energy
have all been investigated as process parameters, while the VTH adjustment
tilt angle and the S/D implant tilt angle have been investigated as noise
factors. When compared to the initial findings before optimization, the IOFF
has a value of 29.579 nA/μm, indicating a significant improvement. Findings
from the optimization technique demonstrate excellent device performance
with an IOFF of 28.564 nA/μm, which is closer to the international
technology roadmap for semiconductors (ITRS) 2013 target.
Creator
Nur Hazwani Naili Mohd Nizam, Afifah Maheran Abdul Hamid, Fauziyah Salehuddin, Khairil Ezwan Kaharudin, Noor Faizah Zainul Abidin, Anis Suhaila Mohd Zain
Source
http://telkomnika.uad.ac.id
Date
Nov 28, 2022
Contributor
peri irawan
Format
pdf
Language
english
Type
text
Files
Collection
Citation
Nur Hazwani Naili Mohd Nizam, Afifah Maheran Abdul Hamid, Fauziyah Salehuddin, Khairil Ezwan Kaharudin, Noor Faizah Zainul Abidin, Anis Suhaila Mohd Zain, “TELKOMNIKA Telecommunication Computing Electronics and Control
Optimization of 14 nm double gate Bi-GFET for lower leakage current,” Repository Horizon University Indonesia, accessed February 5, 2025, https://repository.horizon.ac.id/items/show/4407.
Optimization of 14 nm double gate Bi-GFET for lower leakage current,” Repository Horizon University Indonesia, accessed February 5, 2025, https://repository.horizon.ac.id/items/show/4407.