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TELKOMNIKA Telecommunication Computing Electronics and Control
Optimization of 14 nm double gate Bi-GFET for lower leakage current
In recent years, breakthroughs in electronics technology have upgraded the
physical properties of the metal oxide semiconductor field effect transistor
(MOSFET) toward smaller sizes and improvements in both quality and
performance. Hence, the…
physical properties of the metal oxide semiconductor field effect transistor
(MOSFET) toward smaller sizes and improvements in both quality and
performance. Hence, the…