TELKOMNIKA Telecommunication, Computing, Electronics and Control
New investigation of an E-mode metal-insulator-semiconductor AlInN/AlN/GaN HEMT with an Au-T-gate
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Title
TELKOMNIKA Telecommunication, Computing, Electronics and Control
New investigation of an E-mode metal-insulator-semiconductor AlInN/AlN/GaN HEMT with an Au-T-gate
New investigation of an E-mode metal-insulator-semiconductor AlInN/AlN/GaN HEMT with an Au-T-gate
Subject
AlInN/AlN/GaN
E-mode
HEMT
T-gate
Threshold voltage
E-mode
HEMT
T-gate
Threshold voltage
Description
In a high electron mobility transistor (HEMT), the density of the two-
dimensional electron gas (2DEG) channel is modulated by the application of
a bias to a Schottky metal gate. These devices are depletion mode (D-mode),
which means that a negative bias must be applied to the gate to deplete the
electron channel and turn. The most challenging aspect in the present research
activity on based-GaN devices is the development of a reliable way to achieve
an enhancement-mode (E-mode) HEMT. Enhancement-mode GaN HEMTs
would offer a simplified circuitry by eliminating the negative power supply.
In this work, the aim is to investigate the different techniques which can
influence the threshold voltage and shift it to a positive value. A novel E-mode
metal-insulator-semiconductor (MIS) AlInN/GaN HEMT with an Au-T-gate
has been investigated. The impacts of window-recess and deep-recess have
been discussed, it was found that for dp=28 nm and wn=1.8 μm the threshold
voltage achieves 0.7 V and the transconductance (Gm) peak value of 523 mS
at Vgs=3.5 V. The drain current characteristic has been demonstrated.
dimensional electron gas (2DEG) channel is modulated by the application of
a bias to a Schottky metal gate. These devices are depletion mode (D-mode),
which means that a negative bias must be applied to the gate to deplete the
electron channel and turn. The most challenging aspect in the present research
activity on based-GaN devices is the development of a reliable way to achieve
an enhancement-mode (E-mode) HEMT. Enhancement-mode GaN HEMTs
would offer a simplified circuitry by eliminating the negative power supply.
In this work, the aim is to investigate the different techniques which can
influence the threshold voltage and shift it to a positive value. A novel E-mode
metal-insulator-semiconductor (MIS) AlInN/GaN HEMT with an Au-T-gate
has been investigated. The impacts of window-recess and deep-recess have
been discussed, it was found that for dp=28 nm and wn=1.8 μm the threshold
voltage achieves 0.7 V and the transconductance (Gm) peak value of 523 mS
at Vgs=3.5 V. The drain current characteristic has been demonstrated.
Creator
Asmae Babaya, Adil Saadi, Seddik Bri
Source
http://journal.uad.ac.id/index.php/TELKOMNIKA
Date
Jun 12, 2020
Contributor
PERI IRAWAN
Format
PDF
Language
ENGLISH
Type
TEXT
Files
Collection
Citation
Asmae Babaya, Adil Saadi, Seddik Bri, “TELKOMNIKA Telecommunication, Computing, Electronics and Control
New investigation of an E-mode metal-insulator-semiconductor AlInN/AlN/GaN HEMT with an Au-T-gate,” Repository Horizon University Indonesia, accessed February 2, 2025, https://repository.horizon.ac.id/items/show/3658.
New investigation of an E-mode metal-insulator-semiconductor AlInN/AlN/GaN HEMT with an Au-T-gate,” Repository Horizon University Indonesia, accessed February 2, 2025, https://repository.horizon.ac.id/items/show/3658.