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TELKOMNIKA Telecommunication, Computing, Electronics and Control
New investigation of an E-mode metal-insulator-semiconductor AlInN/AlN/GaN HEMT with an Au-T-gate
In a high electron mobility transistor (HEMT), the density of the two-
dimensional electron gas (2DEG) channel is modulated by the application of
a bias to a Schottky metal gate. These devices are depletion mode (D-mode),
which means that a…
dimensional electron gas (2DEG) channel is modulated by the application of
a bias to a Schottky metal gate. These devices are depletion mode (D-mode),
which means that a…